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Electronics and Communication Engineering - Electronic Devices and Circuits

Exercise : Electronic Devices and Circuits - Section 5
26.
In the given figure, Y =
(A + B)C + DE
AB + C(D + E)
(A + B)C + D + E
none of the above
Answer: Option
Explanation:

.

27.

Assertion (A): The access time of memory is lowest in the case of DRAM

Reason (R): DRAM uses refreshing cycle.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true
Answer: Option
Explanation:

DRAM has lower speed than SRAM.

28.
In a 3 input NOR gate, the number of states in which output is 1 equals
1
2
3
4
Answer: Option
Explanation:

Only one input, i.e., A = 0, B = 0 and C = 0 gives 1 as output.

29.

Assertion (A): Even if TTL gates and CMOS gates used in a realization have the same power supply of + 5 V, suitable circuit is needed to interconnect them

Reason (R): VOH, VOL, VIH and VIL of a TTL gave are respectively 2.4, 0.4, 2 and 0.8 V respectively. If supply voltage is + 5 V. VIL and VIH for CMOS gate for the supply voltage of + 5 V are 1.5 V and 3.5 V respectively.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true
Answer: Option
Explanation:

Interfacing is necessary and interfacing depends on gate parameters like VOH, VOL, IIH, IIL.

30.
The series 54 H/74 H denotes
Standard TTL
High speed TTL
Low Power TTL
High Power TTL
Answer: Option
Explanation:

It denotes high speed TTL.

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