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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 9
31.
In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will
decrease the voltage gain and decrease the I/P impedance
increase the voltage gain and decrease the I/P Impedance
decrease the voltage gain and Increase the I/P impedance
none of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
32.
In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be
100 V
72 V
50 V
38 V
Answer: Option
Explanation:
No answer description is available. Let's discuss.
33.
Consider the following statements.
The functions of an oxide layer in an IC device is to
  1. mask against diffusion or ion implant
  2. insulate the surface electrically
  3. increase the melting point of silicon
  4. produce a chemically stable protective layer of these statements.
1, 2, 3
1, 3, 4
2, 3, 4
1, 2, 4
Answer: Option
Explanation:
No answer description is available. Let's discuss.
34.
The forbidden energy gap for germanium is
0.12 eV
0.32 eV
0.72 eV
0.92 eV
Answer: Option
Explanation:
No answer description is available. Let's discuss.
35.
If the gate of JFET is reverse biased, the width of depletion region
becomes zero
is uniform
is more near the source
is more near the drain
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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