IndiaBIX

Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 13
1.
A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to
increase its IQL
reduce its I0H
increase its speed of operation
reduce power dissipation
Answer: Option
Explanation:
No answer description is available. Let's discuss.
2.

Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band.

Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
3.
The drift velocity of electrons and holes is proportional to electric field strength.
True
False
Answer: Option
Explanation:
No answer description is available. Let's discuss.
4.
In an n channel MOSFET, the substrate is connected
to negative terminal of battery
to positive terminal of battery
to either positive or negative terminal of battery
none of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
5.
Piezoelectric materials serves as a source of
microwaves
ultrasonic waves
musical waves
resonant waves
Answer: Option
Explanation:
No answer description is available. Let's discuss.
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers