Electronics and Communication Engineering - Communication Systems - Discussion
Discussion Forum : Communication Systems - Section 3 (Q.No. 2)
2.
In a reactance FET, gm = 9 x 10-3 Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is
1000 Ω
1/1000 Ω
36 x 103 Ω
x 103 ΩAnswer: Option
Explanation:
.
Discussion:
2 comments Page 1 of 1.
John said:
10 years ago
Given n = 9, gm = 9*10^-3.
Capacitive reactance Xc = 1/(2*pi*f) Ceq.
= 1/(2*pi*f)*(gm/2*pi*f*n).
= n/gm = 1000 ohm.
Capacitive reactance Xc = 1/(2*pi*f) Ceq.
= 1/(2*pi*f)*(gm/2*pi*f*n).
= n/gm = 1000 ohm.
Leena said:
10 years ago
What is the formula for Xc?
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