Electronics - Semiconductor Memory

Exercise :: Semiconductor Memory - Filling the Blanks

1. 

The binary data stored in an EEPROM is___________.

A. volatile
B. permanent
C. refreshed
D. erasable

Answer: Option D

Explanation:

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2. 

The data stored in a Mask ROM (MROM) is ___________.

A. permanent
B. volatile
C. erasable
D. temporary

Answer: Option A

Explanation:

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3. 

A technique of addressing storage cells on a dynamic RAM that sequentially uses the same inputs for the row and column addresses of the cell is called________.

A. flash conversion
B. dynamic refresh
C. address multiplexing
D. address strobe

Answer: Option C

Explanation:

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4. 

Refreshing DRAM typically must occur every ________.

A. 2 mu.gifs
B. 2 ms
C. 8 mu.gifs
D. 8 ms

Answer: Option B

Explanation:

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5. 

The time interval between the memory receiving a new address input and the data being available is called _________.

A. access time
B. bus speed
C. read/write speed
D. write/data speed

Answer: Option A

Explanation:

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