Electronics - Semiconductor Memory

Exercise : Semiconductor Memory - Filling the Blanks
1.
The binary data stored in an EEPROM is___________.
volatile
permanent
refreshed
erasable
Answer: Option
Explanation:
No answer description is available. Let's discuss.

2.
The data stored in a Mask ROM (MROM) is ___________.
permanent
volatile
erasable
temporary
Answer: Option
Explanation:
No answer description is available. Let's discuss.

3.
A technique of addressing storage cells on a dynamic RAM that sequentially uses the same inputs for the row and column addresses of the cell is called________.
flash conversion
dynamic refresh
address multiplexing
address strobe
Answer: Option
Explanation:
No answer description is available. Let's discuss.

4.
Refreshing DRAM typically must occur every ________.
2 mu.gifs
2 ms
8 mu.gifs
8 ms
Answer: Option
Explanation:
No answer description is available. Let's discuss.

5.
The time interval between the memory receiving a new address input and the data being available is called _________.
access time
bus speed
read/write speed
write/data speed
Answer: Option
Explanation:
No answer description is available. Let's discuss.