Electronics - Semiconductor Memory
Exercise :: Semiconductor Memory - Filling the Blanks
1.
The binary data stored in an EEPROM is___________.
A. volatile B. permanent C. refreshed D. erasable
Answer: Option D
Explanation:
2.
The data stored in a Mask ROM (MROM) is ___________.
A. permanent B. volatile C. erasable D. temporary
Answer: Option A
Explanation:
3.
A technique of addressing storage cells on a dynamic RAM that sequentially uses the same inputs for the row and column addresses of the cell is called________.
A. flash conversion B. dynamic refresh C. address multiplexing D. address strobe
Answer: Option C
Explanation:
4.
Refreshing DRAM typically must occur every ________.
Answer: Option B
Explanation:
5.
The time interval between the memory receiving a new address input and the data being available is called _________.
A. access time B. bus speed C. read/write speed D. write/data speed
Answer: Option A
Explanation:
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