Electronics - Semiconductor Memory
Exercise :: Semiconductor Memory - Filling the Blanks
1.
The binary data stored in an EEPROM is___________.
A.
volatile B.
permanent C.
refreshed D.
erasable
Answer: Option D
Explanation:
2.
The data stored in a Mask ROM (MROM) is ___________.
A.
permanent B.
volatile C.
erasable D.
temporary
Answer: Option A
Explanation:
3.
A technique of addressing storage cells on a dynamic RAM that sequentially uses the same inputs for the row and column addresses of the cell is called________.
A.
flash conversion B.
dynamic refresh C.
address multiplexing D.
address strobe
Answer: Option C
Explanation:
4.
Refreshing DRAM typically must occur every ________.
Answer: Option B
Explanation:
5.
The time interval between the memory receiving a new address input and the data being available is called _________.
A.
access time B.
bus speed C.
read/write speed D.
write/data speed
Answer: Option A
Explanation: