Electronics - Diodes and Applications - Discussion
Discussion Forum : Diodes and Applications - General Questions (Q.No. 10)
10.
The characteristic curve for the complex model of a silicon diode shows that
Discussion:
14 comments Page 2 of 2.
Ashish dhyani said:
1 decade ago
@Anub.
Lets say we have a P.N junction diode,
Lets connect it in forward bias. ok.!
It means + of battery is connected to "P"(majority holes)
- of battery is connected to "N"(majority electrons).
So when when v increase the incoming current, electrons(-ve charge)in P gets attracted towards the positive terminal(+)of battery and holes(+ve charge)get attracted to Negative terminal(-ve). So the width of barrier increases.
Lets say we have a P.N junction diode,
Lets connect it in forward bias. ok.!
It means + of battery is connected to "P"(majority holes)
- of battery is connected to "N"(majority electrons).
So when when v increase the incoming current, electrons(-ve charge)in P gets attracted towards the positive terminal(+)of battery and holes(+ve charge)get attracted to Negative terminal(-ve). So the width of barrier increases.
Anub said:
1 decade ago
Kindly explain, how can barrier potential get increases with increase in current when both are inversly proportional to each other.
Arvind kumar said:
1 decade ago
In complex mode diode in forward bias so increse the cureent then increse the output voltage.
Neelaji said:
1 decade ago
When we increase supply voltage the conductivity also increases so mobility of charge carriers also increases then barrier potential decreases
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