# Electronics - Bipolar Junction Transistors (BJT) - Discussion

### Discussion :: Bipolar Junction Transistors (BJT) - General Questions (Q.No.5)

5.

With the positive probe on an NPN base, an ohmmeter reading between the other transistor terminals should be:

 [A]. open [B]. infinite [C]. low resistance [D]. high resistance

Explanation:

No answer description available for this question.

 Girish said: (Jan 8, 2011) In npn base is p juction and when postive prop is coonected to pterminal then it become forward bias and as we know in forward bias resistance is very low.

 Kirti said: (Jan 11, 2011) Since base is conneted to +ve probe it has a higher potential than other terminals so it makes the transistor in forward bias mode for both terminals. Hence low resistance.

 Sadaf said: (Jun 14, 2011) Sine emitter base jnction is forward biased si it will show low resistance.

 Prasad said: (Jun 14, 2011) Since base junction is forward biased collector junction reprsents a low resistnce.

 Pranava said: (Aug 9, 2011) But, There is closed path. So, what difference does it make, positive/negative. So, I think open is the answer

 Veerendra said: (Sep 3, 2011) In npn transistor, base terminal is of p-type. So, when the probe positive terminal is kept on ptype of transitor, now it is just like a transistor in forward bias, which offers a low resistance.

 Ganga said: (Nov 2, 2011) As the transistor is forward biased, it offers low resistance.

 Ganga said: (Nov 2, 2011) As it is forward biased, it offers low resistance.

 Kla said: (May 31, 2012) Since base emitter is forward biased so answer is low resistance.

 Sachin said: (May 31, 2012) In NPN transistor, base terminal is of p-type. So, when the probe positive terminal is kept on ptype of transitor, now it is just like a transistor in forward bias, which offers a low resistance.

 Subhankar said: (Jun 14, 2012) As the transistor becomes forward biased, it offers low resistance.

 Kartik said: (Sep 25, 2012) Because of forward bias it has low resistance.

 Kalpana said: (Sep 29, 2012) When NPN base is conected to P-terminal or P-probe, the transister will operate under forward bias. In forward bias the deplition layer decreases. Then more number of electrons & holes will move from one region to the other region. Hence the resistance becomes low.

 Bilal said: (Dec 24, 2012) But the question is that they ask that if p terminal of supply is connected with p terminal of npn transistor what should be the reading of ohm meter with other two terminals not only for emitter terminal.

 Sathya,Manu said: (Jan 4, 2013) Electrons are attracted towards the +ve terminal of the battery. And as base is p-type, which is connected to +ve of battery.

 Yadhunandana R K said: (Sep 25, 2013) Here question is not correct if positive terminal is there on the base of npn transistor low resistance between base and emitter terminals, high resistance between collector and base.

 Neha Kalani said: (Sep 9, 2014) No @yadhunanda it is rite ! low resistance between both emitter and base as well as base and collector since emitter and collector both will have the negative terminals of the probe ! and hence it will always make a forward bias circuit.

 Yoyo said: (Sep 11, 2014) It is required to obtain resistance b/w emitter and collector. How do you do that?

 Dileep Krishna said: (May 1, 2015) When the positive probe of ohmmeter is placed on the p-type base in the transistor, it makes the condition of forward bias and we know that in forward bias resistance is low. That is the reason for the low resistance.

 Pk Azad said: (Jul 11, 2015) Due to forward wise both junction, it behave low resistance.

 Raheel Afzal Chaudhary said: (May 11, 2017) As we connect a Positive terminal on the base of NPN which is P-type so it reflects that it's forward biased. So resistance is low.

 Sri said: (Mar 25, 2021) Base connected the +ve terminal it's forward biasing condition. Collector base depletion region is high similarly emitter-base depletion region is low compared to CE. So, it's low resistance.