Electronics - Bipolar Junction Transistors (BJT) - Discussion

Discussion Forum : Bipolar Junction Transistors (BJT) - General Questions (Q.No. 18)
18.
When a silicon diode is forward biased, what is VBE for a C-E configuration?
voltage-divider bias
0.4 V
0.7 V
emitter voltage
Answer: Option
Explanation:
No answer description is available. Let's discuss.
Discussion:
5 comments Page 1 of 1.

Faith said:   6 years ago
How diode and transistor relating?
(1)

Anomm said:   6 years ago
Silicon requires minimum 0. 7 Volt (knee voltage) for conduction in forward biased germanium is 0.3V is the minimum for conduction.

Dev singh said:   1 decade ago
Silicon requires minimum 0.7 Volt(knee voltage) for conduction in forward biased due to depletion region and so base to emitter voltage should be 0.7 Volt in C-E configuration.

Anil patel said:   1 decade ago
Silicon requires 0.7v for removing its last orbits electrons.

Ravindra said:   1 decade ago
If Si diode is forward biased how can you find Vbe for transistor in CE configuration ?

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