Electronics and Communication Engineering - Microwave Communication - Discussion

46. 

Assertion (A): Impatt diode is an avalanche diode.

Reason (R): Avalanche breakdown phenomenon occurs when a p-n junction is reverse biased.

[A]. Both A and R are correct and R is correct explanation of A
[B]. Both A and R are correct but R is not correct explanation of A
[C]. A is correct but R is wrong
[D]. A is wrong but R is correct

Answer: Option B

Explanation:

An Impatt diode has n+ - p - i - p + structure and is used with reverse bias.

It exhibits negative resistance and operates on the principle of avalanche breakdown.

Impatt diode circuits are classified as broadly tunable circuit, low Q circuit and high Q circuit.

The impedance of Impatt diode is a few ohms. The word Impatt stands for Impact Avalanche Transit Time diode.

The features of Impatt diode oscillator are : frequency 1 to 300 GHz, Power output (0.5 W to 5 W for single diode circuit and upto 40 W for combination of several diodes), efficiency about 20%.

Its applications include police radar systems, low power microwave transmitter etc.


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