Electronics and Communication Engineering - Materials and Components - Discussion

Discussion Forum : Materials and Components - Section 1 (Q.No. 27)
27.
If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then
the majority carrier density is doubled
the minority carrier density is doubled
the minority carrier density becomes 4 times the original value
both the majority and minority carrier densities double
Answer: Option
Explanation:

As the intrinsic carrier concentration is doubled, the concentration of both electrons and holes is doubled.

Discussion:
4 comments Page 1 of 1.

Argha said:   6 years ago
Answer will be C because extrinsic semiconductor has positive temperature coefficient of resistivity. So when temperature increases resistivity increases and conductivity decreases so concentration of majority carrier will decrease and that of the minority carrier will increase so according to mass action law,

np=ni^2 p will be four times and n will be 1/4 times keeping ni constant .

Chandra shekar said:   1 decade ago
If I assume my doping concentration is ND = 10^16/cm^3 & initial intrinsic concentration is ni = 1.5*10^12 /cm^3 minority concentration will be pn = (ni^2)/ND = 2.25*10^8 if ni gets doubled then pn = ((2*ni)^2)/ND = 9*10^8 but minority concentration is not doubled as mentioned why?

Sazuddin said:   9 years ago
If both will double than how we can say that temperature has a large effect on reverse current than forward.

So there must be some difference in minority carrier and majority.

Manoj Hiwarkar said:   9 years ago
If both the concentrations are equal then we can say that both will be doubled because n0p0 = ni^2.

But it is not mentioned here.

Post your comments here:

Your comments will be displayed after verification.