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Electronics and Communication Engineering - Materials and Components

Exercise : Materials and Components - Section 3
36.

Assertion (A): For most metals, Fermi energy EF is less than 10 eV.

Reason (R): Fermi level of a metal is given by EF = 3.64 x 10-19 (n)2/3 where n is number of free electrons/m3 of metal.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
37.
The capacitance of an insulated conducting sphere of radius R in vacuum is
2p∈0R
4p∈0R
4p∈0R2
4p
Answer: Option
Explanation:
No answer description is available. Let's discuss.
38.
The transition of electron from energy level W1 to W2 is associated with emission or absorption of electro magnetic radiation of frequency f such that
hf = |W1 - W2|
|W1 - W2|f = h
hf = 0.5|W1 - W2|
(hf)2 = |W1 - W2|
Answer: Option
Explanation:
No answer description is available. Let's discuss.
39.
A material has N spins per m3. If Np are the dipoles per m3 parallel to field and Na are the dipoles per m3 anti-parallel to field, the magnetisation is
Answer: Option
Explanation:
No answer description is available. Let's discuss.
40.
Even at room temperature, an intrinsic semiconductor has some holes. These holes are due to
electron
doping
thermal energy
free electrons
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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