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Electronics and Communication Engineering - Exam Questions Papers - Discussion

Discussion Forum : Exam Questions Papers - Exam Paper 13 (Q.No. 41)
Exam Questions Papers
41.
At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is
450 cm2/V-s
1350 cm2/V-s
1800 cm2/V-s
3600 cm2/V-s
Answer: Option
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