Electronics and Communication Engineering - Exam Questions Papers - Discussion

22. 

Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon

[A]. goes down by 0.13 eV
[B]. goes up by 0.13 eV
[C]. goes down by 0.427 eV
[D]. goes up by 0.427 eV

Answer: Option C

Explanation:

Use EF - Ev =

Since it is doped with acceptor impurity, Fermi level will shift down.


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