Electronics and Communication Engineering - Exam Questions Papers - Discussion
Discussion Forum : Exam Questions Papers - Exam Paper 4 (Q.No. 22)
22.
Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of 
to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon
to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped siliconAnswer: Option
Explanation:
Use EF - Ev = 
Since it is doped with acceptor impurity, Fermi level will shift down.
Discussion:
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