Electronics and Communication Engineering - Exam Questions Papers - Discussion
Discussion Forum : Exam Questions Papers - Exam Paper 1 (Q.No. 9)
9.
A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .
Answer: Option
Explanation:
VT(new) = VT(odd) +
= 6.903 x 10-8
∴ 
∴ 
fB = - 8.6 x 1011
The threshold voltage is always negative for p-channel and hence implant is of p-type.
Discussion:
1 comments Page 1 of 1.
Meena vijay sobawane said:
1 year ago
Please explain the answer.
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