Electronics and Communication Engineering - Exam Questions Papers - Discussion

9. 

A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8r = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .

[A]. 8.6 x 1011/cm2, p-type
[B]. 8.6 x 1011/cm2, n-type
[C]. 0.86 x 109/cm2, p-type
[D]. 1.02 x 1012/cm2, n-type

Answer: Option A

Explanation:

VT(new) = VT(odd) +

= 6.903 x 10-8

fB = - 8.6 x 1011

The threshold voltage is always negative for p-channel and hence implant is of p-type.


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