Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 24
- Electronic Devices and Circuits - Section 23
- Electronic Devices and Circuits - Section 22
- Electronic Devices and Circuits - Section 21
- Electronic Devices and Circuits - Section 20
- Electronic Devices and Circuits - Section 19
- Electronic Devices and Circuits - Section 18
- Electronic Devices and Circuits - Section 17
- Electronic Devices and Circuits - Section 16
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 2
6.
A 1 ms pulse can be converted into a 10 ms pulse by using which one of the following
7.
In the DRAM cell in the figure is the Vt of the NMOSFET is 1 V. For the following three combinations of WL and BL voltages.


8.
Assertion (A): The carry look ahead adder is very fast
Reason (R): The carry look ahead adder generates the carry and sum digits directly.
9.
The factors which govern fan out of CMOS gates are
10.
Which of the following subtraction operations do not result in F16?
- (BA)16 - (AB)16
- (BC)16 - (CB)16
- (CB)16 - (BC)16
- (CB)16 - (BC)16
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