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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 14
36.

Assertion (A): In a Schottky diode the reverse recovery time is almost zero.

Reason (R): A Schottky diode has aluminium silicon junction.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
37.
The drain characteristics of JFET are drawn between
VGS and VDS for different values of drain current
drain current and VGS for different values of VDS
drain current and VDS for different values of VGS
drain current and VGS for one value of VDS
Answer: Option
Explanation:
No answer description is available. Let's discuss.
38.
Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?
ni(T) = (A/T) exp (- E8/kT2)
ni(T) = A (- E8/2kT)10
ni(T) = A exp (- E8/2kT2)
ni(T) = AT3/2 exp (-E8/2kT)
Answer: Option
Explanation:
No answer description is available. Let's discuss.
39.
Electrical contact materials used in switches, brushes and relays must possess
high thermal conductivity and high melting point
low thermal conductivity and low melting point
high thermal conductivity and low melting point
low thermal conductivity and high melting point
Answer: Option
Explanation:
No answer description is available. Let's discuss.
40.
A JFET behaves as a constant current source when
VGS = 0
VGS is less than pinch off voltage
VGS = VDS
VGS is more than pinch off voltage
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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