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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 13
26.
The forbidden energy gap in semiconductors
is always zero
lies just below the valence band
lies between the valence band and the conduction band
lies just above the conduction band
Answer: Option
Explanation:
No answer description is available. Let's discuss.
27.
In commercial electron tubes the current produced by the cathode at 1000 K is about
0.01 A per cm2 of cathode surface
0.1 A per cm2 of cathode surface
1 A per cm2 of cathode surface
5 A per cm2 of cathode surface
Answer: Option
Explanation:
No answer description is available. Let's discuss.
28.
In a conductor the conduction and valence bands overlap
True
False
Answer: Option
Explanation:
No answer description is available. Let's discuss.
29.
In which of the following device electrons will be the majority carriers?
P-type semiconductor
N-type semiconductor
N-P-N transistor
P-N-P transistor
Answer: Option
Explanation:
No answer description is available. Let's discuss.
30.
An n channel JFET has IDS whose value is
maximum for VGS = 0 and minimum for VGS negative and large
minimum for VGS = 0 and maximum for VGS negative and large
maximum for VGS = 0 and minimum for VGS positive and large
minimum for VGS = 0 and maximum for VGS positive and large
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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