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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 10
26.

Assertion (A): In CE connection of n-p-n transistor. VCE is positive.

Reason (R): In BJT, the base collector junction is reverse biased.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
27.

Assertion (A): Tunnel diode is used in many pulse and digital circuits.

Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
28.
In ferromagnetic materials
the atomic magnetic moments are antiparallel and unequal
the atomic magnetic moments are parallel
the constituent is iron only
one of the constituents is iron
Answer: Option
Explanation:
No answer description is available. Let's discuss.
29.
Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?
Hartley oscillator
Colpitts oscillator
Crystal oscillator
Twin-T oscillator
Answer: Option
Explanation:
No answer description is available. Let's discuss.
30.
The conductivity of an intrinsic semiconductor is
generally less than that of a doped semiconductor
given by σ1 = eni (μn - μp)
given by σ1 = eni (μp + μn)
given by σ1 = ni (μn + μp)
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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