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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 9
6.
Electric breakdown strength of a material depends on its
composition
moisture content
thickness
all of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
7.
The atomic weight of an atom is determined by
the number of protons
the number of neutrons
the number of protons and neutrons
the number of electrons and protons
Answer: Option
Explanation:
No answer description is available. Let's discuss.
8.
The minimum charge carried by an ion is
zero
equal to the change of an electron
equal to the change of a pair of electrons
equal to the change of electrons left in the atom
Answer: Option
Explanation:
No answer description is available. Let's discuss.
9.
In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about
15 x 104 per cm3
5 x 1012 per cm3
1.45 x 1010 per cm3
1.45 x 106 per cm3
Answer: Option
Explanation:
No answer description is available. Let's discuss.
10.
EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that
more number of electron-hole pairs will be generated in silicon than in germanium at room temperature
less number of electron hole pairs will be generated in silicon than in germanium at room temperature
equal number of electron-hole pairs will be generated in both at lower temperatures
equal number of electron-hole pairs will be generated in both at higher temperatures
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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