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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 8
41.
Consider the following statements about conditions that make a metal semiconductor contact rectifying
  1. N type semiconductor with work function φs more than work function φM of metal
  2. N type semiconductor with work function φs less than work function φM of metal
  3. P type semiconductor with work function φs more than work function φM of metal
  4. P type semiconductor with work function φs less than work function φM of metal.
Of these statements
1 and 3 are correct
2 and 3 are correct
1 and 4 are correct
2 and 4 are correct
Answer: Option
Explanation:
No answer description is available. Let's discuss.
42.
Silicon diodes have __________ reverse resistance than germanium diodes.
a much smaller
a much larger
an infinite
a negligible
Answer: Option
Explanation:
No answer description is available. Let's discuss.
43.
The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
intensity of the incident radiation
wavelength of the incident radiation
surface conditions of the surface
angle of incidence of radiation
Answer: Option
Explanation:
No answer description is available. Let's discuss.
44.
When reverse bias is applied to a junction diode
minority carrier current is increased
majority carrier current is increased
potential barrier is lowered
potential barrier is raised
Answer: Option
Explanation:
No answer description is available. Let's discuss.
45.
Which of the following statements regarding two transistor model of p-n-n-p device is correct?
It explain only the turn on portion of the device characteristics
It explain only the turn off portion of the device characteristics
It explain only the negative region portion of the device characteristics
It explain all the regions of the device characteristics
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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