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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 8
31.
The forbidden band in semiconductors is of the order of
6 eV
1 eV
10 eV
0.01 eV
Answer: Option
Explanation:
No answer description is available. Let's discuss.
32.
For an P-N-P transistor in normal operation its junction are biased as
emitter base : reverse, collector base : forward
emitter base : forward, collector base : reverse
emitter base : forward, collector base : forward
emitter base : reverse, collector base : reverse
Answer: Option
Explanation:
No answer description is available. Let's discuss.
33.
A FET is to be operated as voltage variable resistor. For this drain to source voltage VDS should be,
74
= VP
< VP
> VP
Answer: Option
Explanation:
No answer description is available. Let's discuss.
34.

Assertion (A): FET has characteristics very similar to that of pentode.

Reason (R): Both FET and pentode are voltage controlled devices.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
35.
The current gain of a bipolar transistor drops at high frequencies because of
transistor capacitance
high current effects in the base
parasitic inductive elements
the early effect
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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