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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 8
21.
Figure represents a
Esaki diode
Triac
Varactor
Gunn diode
Answer: Option
Explanation:
No answer description is available. Let's discuss.
22.
Almost all resistors are made in a monolithic integrated circuit
during the entire diffusion
while growing the epitaxial layer
during the base diffusion
during the collector diffusion
Answer: Option
Explanation:
No answer description is available. Let's discuss.
23.
The forbidden energy gap for silicon is
0.12 eV
1.12 eV
0.72 eV
7.2 eV
Answer: Option
Explanation:
No answer description is available. Let's discuss.
24.
In energy band diagram of n type semiconductor, the donor energy level is
in valence band
in conduction band
slightly above valence band
slightly below conduction band
Answer: Option
Explanation:
No answer description is available. Let's discuss.
25.
For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for
high values of drain current
saturation values of drain current
zero drain current
gate current equal to the drain current
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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