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Electronics and Communication Engineering - Electromagnetic Field Theory

Exercise : Electromagnetic Field Theory - Section 6
26.
In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
P+ -doped
n+ -doped
used to reduce the parasitic capacitance
located in the emitter region
Answer: Option
Explanation:
No answer description is available. Let's discuss.
27.
Which quantity controls the effectiveness of LED in emitting light?
Applied voltage
Current
Extent of doping
Temperature
Answer: Option
Explanation:
No answer description is available. Let's discuss.
28.
The current gain of a BJT is
gm r0
gm/r0
gm rp
gm/rp
Answer: Option
Explanation:
No answer description is available. Let's discuss.
29.
Ferromagnetic materials exhibit
a linear B-H behaviour
a non-linear B-H behaviour
an exponential B-H behaviour
none of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
30.
The saturation current in a semi-conductor diode
depends on forward voltage
depends on reverse voltage
is due to thermally generated minority carriers
none of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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