Electronics and Communication Engineering - Electromagnetic Field Theory
Exercise : Electromagnetic Field Theory - Section 4
- Electromagnetic Field Theory - Section 1
- Electromagnetic Field Theory - Section 2
- Electromagnetic Field Theory - Section 3
- Electromagnetic Field Theory - Section 4
- Electromagnetic Field Theory - Section 5
- Electromagnetic Field Theory - Section 6
- Electromagnetic Field Theory - Section 7
- Electromagnetic Field Theory - Section 8
- Electromagnetic Field Theory - Section 9
- Electromagnetic Field Theory - Section 10
- Electromagnetic Field Theory - Section 11
- Electromagnetic Field Theory - Section 12
- Electromagnetic Field Theory - Section 13
- Electromagnetic Field Theory - Section 14
- Electromagnetic Field Theory - Section 15
- Electromagnetic Field Theory - Section 16
36.
As temperature increases the forbidden gap in silicon increases.
Answer: Option
Explanation:
With increase in temperature, the forbidden gap decreases.
37.
Assertion (A): Germanium is more commonly used than silicon.
Reason (R): Forbidden gap in germanium is less than that in silicon.
Answer: Option
Explanation:
A is wrong because germanium is rarely used.
38.
Which of the following devices has substrate?
Answer: Option
Explanation:
All MOSFETs have substrate.
39.
Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.
Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.
Answer: Option
Explanation:
Photo electric emission occurs only if frequency is higher than threshold frequency thus R is wrong.
40.
In degenerate p type semiconductor material, the Fermi level,
Answer: Option
Explanation:
This is due to heavy doping.
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