Electronics and Communication Engineering - Electromagnetic Field Theory
Exercise : Electromagnetic Field Theory - Section 3
- Electromagnetic Field Theory - Section 1
- Electromagnetic Field Theory - Section 2
- Electromagnetic Field Theory - Section 3
- Electromagnetic Field Theory - Section 4
- Electromagnetic Field Theory - Section 5
- Electromagnetic Field Theory - Section 6
- Electromagnetic Field Theory - Section 7
- Electromagnetic Field Theory - Section 8
- Electromagnetic Field Theory - Section 9
- Electromagnetic Field Theory - Section 10
- Electromagnetic Field Theory - Section 11
- Electromagnetic Field Theory - Section 12
- Electromagnetic Field Theory - Section 13
- Electromagnetic Field Theory - Section 14
- Electromagnetic Field Theory - Section 15
- Electromagnetic Field Theory - Section 16
6.
A semiconductor diode is biased in forward direction and carrying current I. The current due to holes in p material is
Answer: Option
Explanation:
Small current due to minority carriers also. Therefore hole current is less than.
7.
Between which regions does BJT act like switch?
Answer: Option
Explanation:
In cut off mode a BJT is an open switch and in saturation mode it is a closed switch.
8.
Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.
Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.
Answer: Option
Explanation:
A is wrong because exposure to light decreases bulk resistance.
9.
Which of the following elements act as donor impurities?
- Gold
- Phosphorus
- Boron
- Antimony
- Arsenic
- Indium
Answer: Option
Explanation:
Only antimony, arsenic and phosphorous are pentavalent.
10.
Light dependent resistor is
Answer: Option
Explanation:
Resistance of LDR depends on light.
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers