Electronics and Communication Engineering - Electromagnetic Field Theory
Exercise : Electromagnetic Field Theory - Section 2
- Electromagnetic Field Theory - Section 1
- Electromagnetic Field Theory - Section 2
- Electromagnetic Field Theory - Section 3
- Electromagnetic Field Theory - Section 4
- Electromagnetic Field Theory - Section 5
- Electromagnetic Field Theory - Section 6
- Electromagnetic Field Theory - Section 7
- Electromagnetic Field Theory - Section 8
- Electromagnetic Field Theory - Section 9
- Electromagnetic Field Theory - Section 10
- Electromagnetic Field Theory - Section 11
- Electromagnetic Field Theory - Section 12
- Electromagnetic Field Theory - Section 13
- Electromagnetic Field Theory - Section 14
- Electromagnetic Field Theory - Section 15
- Electromagnetic Field Theory - Section 16
26.
The mean free path of conduction electrons in copper is about 4 x 10-8 m. For a copper block, find the electric field which can give, on an average, 1 eV energy to a conduction electron
Answer: Option
Explanation:
Work (Energy) = F x d
1 eV = e.E x d
2.5 x 107 V/m.
27.
When a p-n-p transistor is properly biased to operate in active region the holes from emitter.
Answer: Option
Explanation:
The reason that collector current is nearly equal to emitter current.
28.
Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices.
Reason (R): Forbidden gap in silicon is more than that in germanium.
Answer: Option
Explanation:
Wider forbidden gap in silicon makes it less sensitive to temperature than germanium.
29.
Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode.
Reason (R): When a diode is reverse biased surface leakage current flows.
Answer: Option
Explanation:
A is wrong because decrease in junction temperature decreases reverse saturation current.
30.
At room temperature a semiconductor material is
Answer: Option
Explanation:
At 0 K a semiconductor is perfect insulator. At room temperature it is slightly conducting.
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