Electronics and Communication Engineering - Analog Electronics - Discussion

Discussion Forum : Analog Electronics - Section 13 (Q.No. 30)
30.
A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is
100 μF
10 μF
1 μF
20 μF
Answer: Option
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