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Electronics and Communication Engineering - Analog Electronics

Exercise : Analog Electronics - Section 4
16.
Values of VT at 20°C for an ideal P-N diode
25.27 mV
30.3 mV
23 mV
50 mV
Answer: Option
Explanation:

.

17.

Assertion (A): In an op-amp the voltage gain and band width can be adjusted as per requirement

Reason (R): Large value capacitor can also be fabricated on a chip

Both A and R are correct and R is correct explanation for A
Both A and R are correct but R is not correct explanation for A
A is correct R is wrong
A is wrong R is correct
Answer: Option
Explanation:

Large value capacitor cannot be fabricated on a chip.

18.
In figure which diode will conduct and what will be the value of V0?
D3, 1 V
D1, 2 V
D2, 5 V
D1, 5 V
Answer: Option
Explanation:

Since battery connected to anode of D, is of 5 V it is forward biased. D1 and D3 are reverse biased. Output voltage is 5 V.

19.
For the amplifier circuit of figure, the h parameters of transistor are hib = 25 Ω, hfb = 0.999, hob = 10-6 Ω. The voltage gain is
0.999
1.98
20
400
Answer: Option
Explanation:

It is a common base circuit .

20.
In figure, VCC = + 30 V, R1 = 200 kΩ and R2 = 100 kΩ. If VBE = 0.7 V, the voltage a cross RE =
+20 V
+19.3 V
+10 V
+9.3 V
Answer: Option
Explanation:

.

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