Electronics and Communication Engineering - Analog Electronics
Exercise : Analog Electronics - Section 3
- Analog Electronics - Section 11
- Analog Electronics - Section 21
- Analog Electronics - Section 20
- Analog Electronics - Section 19
- Analog Electronics - Section 18
- Analog Electronics - Section 17
- Analog Electronics - Section 16
- Analog Electronics - Section 15
- Analog Electronics - Section 14
- Analog Electronics - Section 13
- Analog Electronics - Section 12
- Analog Electronics - Section 1
- Analog Electronics - Section 10
- Analog Electronics - Section 9
- Analog Electronics - Section 8
- Analog Electronics - Section 7
- Analog Electronics - Section 6
- Analog Electronics - Section 5
- Analog Electronics - Section 4
- Analog Electronics - Section 3
- Analog Electronics - Section 2
46.
A transistor has a power rating of 8 W for a case temperature of 25°C. If derating factor is 30 mW/°C, the power rating for 55°C, case temperature is
Answer: Option
Explanation:
Power rating = 8 - (55 - 25)(30 x 10-3) = 7.1 W.
47.
In figure VBE = 0.7 V. The base current is


Answer: Option
Explanation:
48.
An ideal power supply has
Answer: Option
Explanation:
An ideal power supply should have zero voltage drop.
49.
In a self bias circuit for CE amplifier, the emitter resistance is made three times the original value. The collector current will
Answer: Option
Explanation:
The emitter current becomes one-third since collector current in BJT is almost the same as emitter current, collector current also becomes one-third.
50.
A P-channel MOSFET operating in the enhancement mode is characterized by Vt = - 4 V and IDQ = - 10 mA, when VGSQ = - 5.5 V, what will be VGSQ if IDQ = -15 mA and ID, on = - 16 mA
Answer: Option
Explanation:
.
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers