Electronic Devices - Semiconductors - Discussion

When the reverse voltage is applied then the reverse is started to flow. But when reverse voltage is overcome the reverse breakdown voltage then the heat is produced in diode which may damage the diode.

When a reverse voltage greater than reverse breakdown voltage is applied across the diode, we recieve a reverse current (its direction is opposite to that of forward current during forward bias) in a very short period of time due to the flow of minority cariers in p- and n-type.

In reverse bias condition of diode, junction barrier and reverse bias voltage break the movement of majority charge carriers at both side but minority charge carriers cross the junction of both side due to this a large reverse leakage current occurs.

So we can say flowing of reverse leakage current due to the minority charge carriers.

At very large reverse bias, beyond the peak inverse voltage or PIV, a process called reverse breakdown occurs which causes a large increase in current (i.e. a large number of electrons and holes are created at, and move away from the pn junction) that usually damages the device permanently.