Electronic Devices - BJT Devices - Discussion

How is this correct?

As far as I know, when operating in the active region, the V(BC) should be reverse-biased and the V(BE) is forward-biased.

The question clearly asks for the V(CB) biasing which is forward biased. Please clarify.

Transistor can be operate in 3 regions:

1. Active.
2. Cut-off.
3. Saturation.

In active region emitter-base F.B. Base-collector R.B.

In saturation region both R.B. In cut-off region both F.B.

When transistor is in active region, one should be forward biased and other should be reverse biased.
when transistor is in saturation region both are forward biased.
And when transistor is in cut-off region both are reverse biased.

@Divya.
Electrons and holes vl act as majority carriers in n-type and p-type region respectively. whereas, electrons and holes in p-type region and n-type region respectively act as minority carriers.

Leakage current occurs only when transistor is reverse biased due to minority carrier.

Emiter current flows through the base into the collector. Through the collector base junction is revers biased, almost entire current flows through the collector circuit.

1). Describe the differnces between majority and minority carriers?.

2). Describe how diffusion and transition capacitances differ?

3). How must the two transistors junctions be biased for proper transistor amplifier operation?.

4). What is the sorce of leakage current in a transistor?.