Electronic Devices - BJT Devices - Discussion
Discussion Forum : BJT Devices - General Questions (Q.No. 1)
1.
How much is the base-to-emitter voltage of a transistor in the "on" state?
Discussion:
10 comments Page 1 of 1.
Pooja thakur said:
8 years ago
In active mode BE junction in forward bias to overcome this Barrier potential we need to apply voltage greater than 0.6.
Pavankalyan said:
9 years ago
The transistor is in on state above 0.7v need to overcome the potential barrier.
Madhu said:
10 years ago
Has silicon breakdown 0.7 in forward bias so based on this.
Deva said:
1 decade ago
Very simple. If we provide the voltage just exactly above the 0.7v (for p-n diode) then it will operate as it designed.
Ramesh R said:
1 decade ago
For a transistor to be in ON state it need to overcome its barrier potential which is 0.7V.
Saif said:
1 decade ago
Because always from base to emitter its working is like silicon diode so it hold 0.7v.
Neelaji said:
1 decade ago
In active mode base-emitter junction should be in forward biased so, to over come the barrier potential we have to provide voltage >0.6v
Subhajit ghosh said:
1 decade ago
To be in on state both BE junction and CE junction has to be forward biased.since cut in voltage of a diode is 0.7 v to be in forward biased, BE junction, which is also a pn junction, applied voltage should be greater than 0.7 v.
Dhandapani said:
1 decade ago
The answer is 0.7mv
Sri said:
1 decade ago
because in active mode base-emitter junction in forward biased so, to over come the barrier potential we have to provide voltage >0.6v
Post your comments here:
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers