Online Electronics and Communication Engineering Test - Electronics and Communication Engineering Test - Random
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- Total number of questions: 20.
- Time allotted: 30 minutes.
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Marks : 2/20
Test Review : View answers and explanation for this test.
The total number of states corresponding to a given value of n is equal to
(2l + 1) = 1 + 3 + .... + [2(n-1) + 1] = n2.
Its units are the same as the units of conductance.
Assertion (A): Megger is used to check insulation resistance of cables.
Reason (R): Insulation resistance of cables is very high.
Number of comparators = 2n - 1 = 23 - 1 = 7.
'Ao' = 10 x 161 + 0 = 160.
Assertion (A): Impatt diode is an avalanche diode.
Reason (R): Avalanche breakdown phenomenon occurs when a p-n junction is reverse biased.
An Impatt diode has n+ - p - i - p + structure and is used with reverse bias.
It exhibits negative resistance and operates on the principle of avalanche breakdown.
Impatt diode circuits are classified as broadly tunable circuit, low Q circuit and high Q circuit.
The impedance of Impatt diode is a few ohms. The word Impatt stands for Impact Avalanche Transit Time diode.
The features of Impatt diode oscillator are : frequency 1 to 300 GHz, Power output (0.5 W to 5 W for single diode circuit and upto 40 W for combination of several diodes), efficiency about 20%.
Its applications include police radar systems, low power microwave transmitter etc.
, the coefficient of term e-t in f(t) will beCoefficient of e-t =
.

then |A50| will beAn = ?
Every n x n matrix satisfy its characteristic equation |A - λI| = 0 λ -> eigen vector
A - λI =
|A - λI| =
= 0
∴ 1 =
,
∴ f(A) = An = β0I + β1A
Replace A by 1, I by 1
f(λ) = λn = β0 + β1λ
Differentiate w.r.t. λ nλn - 1 = β1
β1 =
∴ β0 = λn - β x λ
β1 =
β0 =
-
=
[1 - n]
∴ An =
[1 - n]
+
. 2n
∴ An = 
= 
∴ A50 = 
|A50| =
(1 - 502).
Assertion (A): For same drain current rating N-channel MOSFET occupies more area than p-channel MOSFET.
Reason (R): Electron mobility is much higher than hole mobility.
(1 - 1002)
(1 - 1002)
(1 - 502)