Electronic Devices - Two-Terminal Devices

Exercise : Two-Terminal Devices - Filling the Blanks
6.
In both n-type and p-type silicon materials, the ________ is the majority carrier in a Schottky diode.
hole
electron
proton
neutron
Answer: Option
Explanation:
No answer description is available. Let's discuss.

7.
A decrease in illumination ________ the resistance R of a photoconductive cell.
decreases
increases
maintains
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

8.
In the reverse-bias region of varactor diodes, the resistance RR in parallel with the varying capacitor is ________ and the series resistance RS is ________.
very large, very small
very large, very large
very small, very large
very small, very small
Answer: Option
Explanation:
No answer description is available. Let's discuss.

9.
A Schottky diode has ________ level of current at the same applied bias compared to that of the p-n junction at both the forward- and reverse-bias regions.
a lower
a higher
the same
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

10.
Schottky diode construction results in a ________ uniform junction region and a ________ level of ruggedness.
more, high
less, high
more, low
less, low
Answer: Option
Explanation:
No answer description is available. Let's discuss.