Electronic Devices - Semiconductors - Discussion
Discussion Forum : Semiconductors - General Questions (Q.No. 7)
7.
For a forward-biased diode, the barrier potential ________ as temperature increases.
Discussion:
20 comments Page 2 of 2.
Jeetesh sharma said:
1 decade ago
In forward bias barrier potential is decrease if temp increase, because barrier potential is the value of depletion width.
Priyanka said:
1 decade ago
Vd~nVtlog(If/Is)
Is(leakage current is more sensitive to temperature than Vt(thermal voltage)...If increases, log function decreases therefore forward voltage decreases.
Is(leakage current is more sensitive to temperature than Vt(thermal voltage)...If increases, log function decreases therefore forward voltage decreases.
Anuja singh said:
1 decade ago
In fb region characteristics of diode shifts towards left by rise in temp therefore the barrier potential decreases.
Prashanth said:
1 decade ago
It decreases because as the temperature increases, electrons get excited and starts moving across the barrier. This results in decrease of barrier potential.
Peyush said:
1 decade ago
Vbi = kT/e ln(NaNd/Ni^2)
since, NaNd < Ni^2
which makes ln(NaNd/Ni^2) a negetive value. When temperature increases the value of Vbi becomes more negetive or we can say its value decreases.
since, NaNd < Ni^2
which makes ln(NaNd/Ni^2) a negetive value. When temperature increases the value of Vbi becomes more negetive or we can say its value decreases.
Haribabu said:
1 decade ago
According to energy band theory if temperature increases the vbi built in potential decreases. Why because due to average thermal energy kt increases more number of carriers will go into conduction band or diffusion length decreases. Or by taking potential hill negative for p side in a p-n junction it will prevent majority carriers movement from p to n side. As temp increases applied vtg increases to nullify vbi neg in p side and holes will now going to higher to lower. Diffusion process may increases due to smaller energy gap.
Nanhe said:
1 decade ago
@ramandeep.
Barrier potential decreases with increase in temp.
From expression v. = kt/e loge NaNd/Ni^2. Itt appears barrier potential increases but due to increase in temp. There is more thermally generated charge carriers. Hence value of Ni in the expression increases. Hence net effect is that barrier potential decreases. We also have a relation change in barrier potential for silicon is -2. 5mv /c rise in temp.
Barrier potential decreases with increase in temp.
From expression v. = kt/e loge NaNd/Ni^2. Itt appears barrier potential increases but due to increase in temp. There is more thermally generated charge carriers. Hence value of Ni in the expression increases. Hence net effect is that barrier potential decreases. We also have a relation change in barrier potential for silicon is -2. 5mv /c rise in temp.
Ramandeep said:
1 decade ago
v.=kt loge NaNd/Ni^2
i.e when temp inc barrier potential inc
i.e when temp inc barrier potential inc
Sai said:
1 decade ago
As we increase the temperature the gap b/w the pn junction decreases so there should be breakage/decrease of barrier potential.
Santosh said:
1 decade ago
As the temparature increases the enrgy gap between valence band and conduction band decreases and hence barrier potential may also decrease.
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