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Electronic Devices - FET Devices

Exercise : FET Devices - General Questions
11.
It is the insulating layer of ________ in the MOSFET construction that accounts for the very desirable high input impedance of the device.
SiO
GaAs
SiO2
HCl
Answer: Option
Explanation:
No answer description is available. Let's discuss.
12.
The BJT is a ________ device. The FET is a ________ device.
bipolar, bipolar
bipolar, unipolar
unipolar, bipolar
unipolar, unipolar
Answer: Option
Explanation:
No answer description is available. Let's discuss.
13.
Referring to this transfer curve. Calculate (using Shockley's equation) VGS at ID = 4mA.

2.54 V
–2.54 V
–12 V
Undefined
Answer: Option
Explanation:
No answer description is available. Let's discuss.
14.
The drain current will always be one-fourth of IDSS as long as the gate-to-source voltage is ________ the pinch-off value.
one-fourth
one-half
three-fourths
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
15.
The transfer curve is not defined by Shockley's equation for the ________.
JFET
depletion-type MOSFET
enhancement-type MOSFET
BJT
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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