IndiaBIX.com
Arithmetic Aptitude Data Interpretation
Logical Reasoning Verbal Reasoning Non Verbal Reasoning
General Knowledge
Sudoku Number puzzles Missing letters puzzles Logical puzzles Playing cards puzzles Clock puzzles
C Programming C++ Programming C# Programming Java Programming
Microbiology Biochemistry Biotechnology Biochemical Engineering
Civil Engineering Mechanical Engineering Chemical Engineering Networking Database Questions Computer Science Basic Electronics Digital Electronics Electronic Devices Circuit Simulation Electrical Enigneering Engineering Mechanics Technical Drawing
Placement Papers Group Disucssion HR Interview Technical Interview Body Language
Aptitude Test Verbal Ability Test Verbal Reasoning Test Logical Reasoning Test C Programming Test Java Programming Test Data Interpretation Test General Knowledge Test
Data Structures Operating Systems Networking DATABASE Database Basics SQL Server Basics SQL Server Advanced SQL Server 2008 JAVA Core Java Java Basics Advanced Java UNIX Unix File Management Unix Memory Management Unix Process Managemnt C Interview Questions The C Language Basics .NET Interview Questions .NET Framework ADO.NET ASP.NET Software Testing

Companies

Placement Papers - BEL

@ : Home > Placement Papers > BEL > View Paper
BEL PAPER - 13 MAY 2007
Rated : +6 , -0
Hi Friends

I, Neeraj Kumar, sending the BEL question paper pattern and some questions, asked in the written test of BEL that was held on 13 May 2007.

There were 150 questions (30 questions from general awareness, reasoning and English) nd remaining questions frm technical
e.g. three ques based on the passage & english.

1) 1,8,27,64,125...
which element does nt belong to the above series.
(i) 259  (ii)729  (iii) 1000  (iv) 512.     ans:(i)

some technical questions
(1)the breakdown voltage of a transitor with its base open is BV(ceo) and that with emitter open BV(cbo) then,
ans: BV(cbo)>BV(ceo)

(2)a zener diode works on the principle of
ans:tunneling of charge carriers across the jn.

(3)under the high electric field, in a semiconductor with increasing electric field-
ans:the drift velocity of charge carriers saturate.

(4) built-in potential in a p-n jn.-
(i) is equal to the difference in the fermi level of the two sides,expressed in volts.
(ii) increased with increase in doping levels of the two sides.
(iii)increse  with the increase in temp.
(iv)all the above.
ans : (iv)

(5) in an 8085, microprocessor system with memory mapped I/O:
(i) I/O device have 8-bit addresses.
(ii)I/O devices are accessed using IN and OUT instructions.
(iii)there can be a max of 256 input devices and 256 output devices.
(iv) airthmetic  and logic operations can be directly performed with the I/Odata.
ans : (iv)

note: mostly quetions frm basic electronics, control systems and network systems

Like this?   +6   -0



© 2008-2013 by IndiaBIX™ Technologies. All Rights Reserved | Copyright | Terms of Use & Privacy Policy

Contact us: info@indiabix.com     Follow us on twitter!