Electronics and Communication Engineering - Electronic Devices and Circuits

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You can easily solve all kind of Electronics and Communication Engineering questions based on Electronic Devices and Circuits by practicing the objective type exercises given below, also get shortcut methods to solve Electronics and Communication Engineering Electronic Devices and Circuits problems.

1. 

At room temperature the current in an intrinsic semiconductor is due to

A. holes
B. electrons
C. ions
D. holes and electrons

Answer: Option D

Explanation:

Intrinsic material has equal number of holes and electrons.


2. 

Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

A. True
B. False

Answer: Option B

Explanation:

Work function is the minimum energy required by the fastest electron at 0 K to escape from the metal surface.


3. 

The most commonly used semiconductor material is

A. silicon
B. germanium
C. mixture of silicon and germanium
D. none of the above

Answer: Option A

Explanation:

Germanium is rarely used.


4. 

In which of these is reverse recovery time nearly zero?

A. Zener diode
B. Tunnel diode
C. Schottky diode
D. PIN diode

Answer: Option C

Explanation:

In schottky diode there is no charge storage and hence almost zero reverse recovery time.


5. 

A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

A. 100
B. 99
C. 1.01
D. 0.99

Answer: Option A

Explanation:

Current gain = 1 + β = 100.


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