# Electronics and Communication Engineering - Electronic Devices and Circuits

## Why Electronics and Communication Engineering Electronic Devices and Circuits?

In this section you can learn and practice Electronics and Communication Engineering Questions based on "Electronic Devices and Circuits" and improve your skills in order to face the interview, competitive examination and various entrance test (CAT, GATE, GRE, MAT, Bank Exam, Railway Exam etc.) with full confidence.

## Where can I get Electronics and Communication Engineering Electronic Devices and Circuits questions and answers with explanation?

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## Where can I get Electronics and Communication Engineering Electronic Devices and Circuits Interview Questions and Answers (objective type, multiple choice)?

Here you can find objective type Electronics and Communication Engineering Electronic Devices and Circuits questions and answers for interview and entrance examination. Multiple choice and true or false type questions are also provided.

## How to solve Electronics and Communication Engineering Electronic Devices and Circuits problems?

You can easily solve all kind of Electronics and Communication Engineering questions based on Electronic Devices and Circuits by practicing the objective type exercises given below, also get shortcut methods to solve Electronics and Communication Engineering Electronic Devices and Circuits problems.

1.

At room temperature the current in an intrinsic semiconductor is due to

 A. holes B. electrons C. ions D. holes and electrons

Explanation:

Intrinsic material has equal number of holes and electrons.

2.

Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

 A. True B. False

Explanation:

Work function is the minimum energy required by the fastest electron at 0 K to escape from the metal surface.

3.

The most commonly used semiconductor material is

 A. silicon B. germanium C. mixture of silicon and germanium D. none of the above

Explanation:

Germanium is rarely used.

4.

In which of these is reverse recovery time nearly zero?

 A. Zener diode B. Tunnel diode C. Schottky diode D. PIN diode

Explanation:

In schottky diode there is no charge storage and hence almost zero reverse recovery time.

5.

A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

 A. 100 B. 99 C. 1.01 D. 0.99