Digital Electronics - Memory and Storage

Why Digital Electronics Memory and Storage?

In this section you can learn and practice Digital Electronics Questions based on "Memory and Storage" and improve your skills in order to face the interview, competitive examination and various entrance test (CAT, GATE, GRE, MAT, Bank Exam, Railway Exam etc.) with full confidence.

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Here you can find objective type Digital Electronics Memory and Storage questions and answers for interview and entrance examination. Multiple choice and true or false type questions are also provided.

How to solve Digital Electronics Memory and Storage problems?

You can easily solve all kind of Digital Electronics questions based on Memory and Storage by practicing the objective type exercises given below, also get shortcut methods to solve Digital Electronics Memory and Storage problems.

Exercise :: Memory and Storage - General Questions

1. 

How many address bits are needed to select all memory locations in the 2118 16K × 1 RAM?

A. 8
B. 10
C. 14
D. 16

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.

2. 

The check sum method of testing a ROM:

A. indicates if the data in more than one memory location is incorrect.
B. provides a means for locating and correcting data errors in specific memory locations.
C. allows data errors to be pinpointed to a specific memory location.
D. simply indicates that the contents of the ROM are incorrect.

Answer: Option D

Explanation:

No answer description available for this question. Let us discuss.

3. 

Refer to the given figures (a) and (b). A logic analyzer is used to check the circuit in figure (a) and displays the waveforms shown in figure (b). The actual analyzer display shows all four data outputs, Q0-Q3. The analyzer's cursor is placed at position X and all four of the data output lines show a LOW level output. What is wrong, if anything, with the circuit?

A. Nothing is wrong, according to the display. The outputs are in the open state and should show zero output voltage.
B. The circuit is in the READ mode and the outputs, Q0-Q3, should reflect the contents of the memory at that address. The chip is defective; replace the chip.
C. The circuit is in the mode and should be writing the contents of the selected address to Q0–Q3.
D. The Q0–Q3 lines can be either LOW or HIGH, since the chip is in the tristate mode in which case their level is unpredictable.

Answer: Option A

Explanation:

No answer description available for this question. Let us discuss.

4. 

What is the meaning of RAM, and what is its primary role?

A. Readily Available Memory; it is the first level of memory used by the computer in all of its operations.
B. Random Access Memory; it is memory that can be reached by any sub- system within a computer, and at any time.
C. Random Access Memory; it is the memory used for short-term temporary data storage within the computer.
D. Resettable Automatic Memory; it is memory that can be used and then automatically reset, or cleared, after being read from or written to.

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.

5. 

The storage element for a static RAM is the ________.

A. diode
B. resistor
C. capacitor
D. flip-flop

Answer: Option D

Explanation:

No answer description available for this question. Let us discuss.

6. 

In a DRAM, what is the state of R/W during a read operation?

A. Low
B. High
C. Hi-Z
D. None of the above

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.

7. 

The condition occurring when two or more devices try to write data to a bus simultaneously is called ________.

A. address decoding
B. bus contention
C. bus collisions
D. address multiplexing

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.